Транзистор: N-MOSFET; полевой; 250В; 8,5А; 125Вт; D2PAK Семейство Силовые МОП-транзисторы, D2PAK, IR Технические параметры
- #Promotion: vishay_201906
- Case: D2PAK
- Channel kind: enhanced
- Continuous Drain Current (Id): 14A
- Drain current: 8.5A
- Drain-source voltage: 250V
- Drain-Source Voltage (Vds): 250V
- Fall Time: 49ns
- Gate charge: 68нКл
- Gate-source voltage: ±20V
- Gate-Source Voltage: 20V
- Height Units: 3
- Kind of package: tube
- Manufacturer: Vishay
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 280mΩ
- On-State Resistance: 0.28Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: DDPAK
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 125W
- Power Dissipation (Pd): 125W
- Rise Time: 24ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 53ns
- Turn-ON Delay Time: 11ns
- Type of transistor: N-MOSFET
