MOSFET N, 200 V 4.1 A 30 W TO-220 Семейство Силовые MOП-транзисторы Технические параметры
- Continuous Drain Current (Id): 2.6A
- Drain-Source Voltage (Vds): 200V
- Fall Time: 13ns
- Gate-Source Voltage: 20V
- Height Units: 3
- Manufacturer: Vishay
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 800mΩ
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220
- Phases: Single
- Power Dissipation (Pd): 30W
- Rise Time: 22ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 19ns
- Turn-ON Delay Time: 7.2ns