Транзистор: МОП n-канальный; полевой; 800В; 4А; 125Вт; TO220AB Семейство Силовые MOП-транзисторы Технические параметры
- Case: TO220AB
- Continuous Drain Current (Id): 4.1A
- Drain current: 4A
- Drain-source voltage: 800V
- Drain-Source Voltage (Vds): 800V
- Fall Time: 30ns
- Gate-Source Voltage: 20V
- Height Units: 3
- Housing: TO220AB
- Manufacturer: Vishay
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 3Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220AB
- Phases: Single
- Polarisation: unipolar
- Polarity: полевой
- Power Dissipation (Pd): 125W
- Rise Time: 33ns
- Transistor Polarity: N-Channel
- Transistor type: МОП n-канальный
- Turn-OFF Delay Time: 82ns
- Turn-ON Delay Time: 12ns
- Мощность: 125W
- Ток стока: 4A
