Транзистор: N-MOSFET; полевой; 650В; 5,4А; 167Вт; TO220AB Семейство Силовые MOП-транзисторы Технические параметры
- #Promotion: vishay_201906
- Case: TO220AB
- Channel kind: enhanced
- Drain current: 5.4A
- Drain-source voltage: 650V
- Gate charge: 48нКл
- Gate-source voltage: ±30V
- Kind of package: tube
- Manufacturer: Vishay
- Mounting: THT
- On-State Resistance: 0.93Ω
- Polarisation: unipolar
- Power dissipation: 167W
- Type of transistor: N-MOSFET