Транзистор: N-MOSFET; полевой; 500В; 11А; 220Вт; TO220AB Семейство Силовые MOП-транзисторы Технические параметры
- #Promotion: vishay_201906
- Case: TO220AB
- Channel kind: enhanced
- Continuous Drain Current (Id): 16A
- Drain current: 11A
- Drain-source voltage: 500V
- Drain-Source Voltage (Vds): 500V
- Fall Time: 28ns
- Gate charge: 130нКл
- Gate-Source Voltage: 30V
- Gate-source voltage: ±30V
- Height Units: 3
- Kind of package: tube
- Manufacturer: Vishay
- Mounting: THT
- Mounting Type: Through Hole
- ON Resistance (Rds(on)): 320mΩ
- On-State Resistance: 0.28Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220AB
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 220W
- Power Dissipation (Pd): 220W
- Rise Time: 51ns
- Transistor Polarity: N-Channel
- Turn-OFF Delay Time: 20ns
- Turn-ON Delay Time: 21ns
- Type of transistor: N-MOSFET
