Транзистор: P-MOSFET; полевой; -100В; -2А; 25Вт; DPAK Семейство Силовые MOП-транзисторы Технические параметры
- #Promotion: vishay_201906
- Case: DPAK
- Channel kind: enhanced
- Continuous Drain Current (Id): -3.1A
- Drain current: -2A
- Drain-source voltage: -100V
- Drain-Source Voltage (Vds): -100V
- Fall Time: 17ns
- Gate charge: 8.7нКл
- Gate-source voltage: ±20V
- Gate-Source Voltage: 20V
- Height Units: 3
- Kind of package: tube
- Manufacturer: Vishay
- Mounting: SMD
- Mounting Type: SMD
- MSL: Level-1
- ON Resistance (Rds(on)): 1.2Ω
- On-State Resistance: 1.2Ω
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-252
- Packaging: Tape & Reel
- Phases: Single
- Polarisation: unipolar
- Power dissipation: 25W
- Power Dissipation (Pd): 25W
- Rise Time: 27ns
- Transistor Polarity: P-Channel
- Turn-OFF Delay Time: 15ns
- Turn-ON Delay Time: 10ns
- Type of transistor: P-MOSFET
