Транзистор: IGBT; 1200В; 30А; 220Вт; TO247-3 Технические параметры
- Case: TO247-3
- Collector current: 30A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.75V
- Collector-emitter voltage: 1200V
- Collector-Emitter Voltage (Vceo): 1.2kV
- Continuous Collector Current (Ic): 60A
- Emitter Leakage Current: 100nA
- Gate - emitter voltage: ±25V
- Gate charge: 110нКл
- Gate Emitter Voltage (Vge): 25V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-247
- Packaging: Tube
- Phases: Single
- Power dissipation: 220W
- Power Dissipation (Pd): 220W
- Pulsed collector current: 135A
- Type of transistor: IGBT