Транзистор: IGBT; 600В; 10А; 65Вт; TO220AB Технические параметры
- Case: TO220AB
- Collector current: 10A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.5V
- Collector-emitter voltage: 600V
- Collector-Emitter Voltage (Vceo): 600V
- Continuous Collector Current (Ic): 20A
- Emitter Leakage Current: 100nA
- Gate - emitter voltage: ±20V
- Gate charge: 19нКл
- Gate Emitter Voltage (Vge): 20V
- Height Units: 3
- Kind of package: tube
- Manufacturer: STM
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-220
- Packaging: Tube
- Phases: Single
- Power dissipation: 65W
- Power Dissipation (Pd): 65W
- Pulsed collector current: 30A
- Type of transistor: IGBT
