Транзистор: IGBT; 600В; 80А; 250Вт; TO247 Технические параметры
- Case: TO247
- Collector current: 80A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.4V
- Collector-emitter voltage: 600V
- Collector-Emitter Voltage (Vceo): 600V
- Continuous Collector Current (Ic): 80A
- Emitter Leakage Current: 100nA
- Gate Emitter Voltage (Vge): 20V
- Height Units: 3
- Housing: TO247
- Manufacturer: STM
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: TO-247
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 250W
- Transistor type: IGBT
- Мощность: 250W
- Напряжение коллектор-эмиттер: 600V