Технические параметры
- Topology: three-level inverter; single-phase
- Technology: Trench
- Application: photovoltaics
- Collector current: 30A
- Module type: IGBT
- Electrical mounting: Press-in PCB
- Mechanical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 600V
- Semiconductor structure: diode/transistor
- Pulsed collector current: 60A
- Case: SP1