Технические параметры
- Power: 379 W
- Topology: IGBT half-bridge
- Collector current: 62 A
- Operating temperature: -40...150°C
- Module type: IGBT
- Electrical mounting: soldered
- Gate - emitter voltage: 20 V
- Off state voltage max.: 1.2 kV
- Semiconductor structure: transistor/transistor
- Max. forward impulse current: 100 A
- Mounting: screwed
- Case: ECO-PAC 2