Модуль: IGBT; 600В; 379А; SEMIX2S Технические параметры
- Case: SEMIX2S
- Collector current: 379A
- Collector-emitter voltage: 600V
- Electrical mounting: винтами
- Gate - emitter voltage: ±20В
- Housing: SEMIX2S
- Manufacturer: SEMIKRON
- Max. forward impulse current: 1.8kA
- Modular: IGBT
- Module type: IGBT
- Mount: винтами
- Mounting: screwed
- Off state voltage max.: 600V
- Operating temperature: -40...125°C
- Semiconductor structure: диод/транзистор
- Topology: тормозной транзистор
