Модуль: IGBT; 1,2кВ; 186А; SEMITRANS3 Технические параметры
- Case: SEMITRANS3
- Collector current: 186A
- Collector-emitter voltage: 1.2kV
- Electrical mounting: винтами
- Gate - emitter voltage: ±20В
- Housing: SEMITRANS3
- Manufacturer: SEMIKRON
- Max. forward impulse current: 414A
- Modular: IGBT
- Module type: IGBT
- Mount: винтами
- Mounting: screwed
- Off state voltage max.: 1.2kV
- Operating temperature: -40...125°C
- Semiconductor structure: диод/транзистор
- Topology: тормозной транзистор