Модуль: IGBT; транзистор/транзистор; полумост IGBT; Urmax: 1,2кВ Технические параметры
- Case: AG-62MM
- Collector current: 450A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: Infineon
- Module type: IGBT
- Mounting: screw
- Off state voltage max.: 1.2kV
- Power dissipation: 2.4kW
- Pulsed collector current: 900A
- Semiconductor structure: transistor/transistor
- Topology: IGBT half-bridge