Технические параметры
- Topology: IGBT half-bridge
- Collector current: 500A
- Operating temperature: -40...125°C
- Module type: IGBT
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.7kV
- Semiconductor structure: transistor/transistor
- Max. forward impulse current: 1kA
- Mounting: screw
- Case: AG-62MM-1