Технические параметры
- Power: 175W
- Topology: three-phase diode bridge
- Technology: EasyPIM™ 2B
- Collector current: 50A
- Operating temperature: -40...125°C
- Module type: IGBT
- Electrical mounting: Press Fit
- Gate - emitter voltage: ±20V
- Off state voltage max.: 600V
- Semiconductor structure: diode/transistor
- Max. forward impulse current: 100A
- Mounting: screw
- Case: AG-EASY2B-2