Технические параметры
- Case: SOT227B
- Collector current: 76A
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 2.6V
- Collector-emitter voltage: 1.2kV
- Collector-Emitter Voltage (Vceo): 1.2kV
- Continuous Collector Current (Ic): 165A
- Electrical mounting: screw
- Emitter Leakage Current: 100nA
- Gate - emitter voltage: ±20V
- Gate Emitter Voltage (Vge): 20V
- Height Units: 4
- Manufacturer: IXYS
- Module type: IGBT
- Mounting: screw
- Mounting Type: SMD
- Operating Temperature Max.: 150°C
- Operating Temperature Min.: -55°C
- Package Type: SOT-227B
- Packaging: Tube
- Phases: Single
- Power dissipation: 690W
- Power Dissipation (Pd): 690W
- Pulsed collector current: 480A
- Reflow Temperature Max.: 260°C
- Semiconductor structure: single transistor
- Technology: XPT™
