Технические параметры
- Topology: three-phase diode bridge
- Technology: EasyPIM™ 1B
- Collector current: 25A
- Module type: IGBT
- Electrical mounting: Press Fit
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.2kV
- Semiconductor structure: diode/transistor
- Pulsed collector current: 50A
- Mounting: screw
- Case: AG-EASY1B-2