3-фазный диодный мост,термистор NTC,тормозной транзистор Технические параметры
- Case: V1-A-Pack
- Collector current: 40A
- Collector-emitter voltage: 1.2kV
- Gate - emitter voltage: ±20V
- Manufacturer: IXYS
- Module type: IGBT
- Mounting: screw
- Power dissipation: 195W
- Pulsed collector current: 105A
- Semiconductor structure: diode/transistor
- Topology: three-phase diode bridge