Технические параметры
- Power: 350W
- Topology: IGBT half-bridge
- Technology: NPT
- Collector current: 75A
- Operating temperature: -40...125°C
- Module type: IGBT
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 600V
- Semiconductor structure: transistor/transistor
- Pulsed collector current: 150A
- Mounting: screw
- Case: HB9434