Технические параметры
- Topology: three-phase diode bridge
- Technology: NPT
- Application: motors
- Collector current: 18A
- Module type: IGBT
- Electrical mounting: Press-in PCB
- Gate - emitter voltage: ±20V
- Off state voltage max.: 600V
- Semiconductor structure: diode/transistor
- Pulsed collector current: 30A
- Mounting: screw
- Case: E2-Pack
- Power dissipation: 100W