Технические параметры
- Topology: three-phase diode bridge
- Application: Inverter
- Collector current: 40A
- Module type: IGBT
- Electrical mounting: FASTON connectors
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.2kV
- Semiconductor structure: diode/transistor
- Pulsed collector current: 105A
- Mounting: screw
- Case: V1-A-Pack
- Power dissipation: 195W