Модуль: IGBT; диод/транзистор; boost chopper; Urmax: 600В; Ic: 20А Технические параметры
- Manufacturer: SEMIKRON
- Power: 4kW
- Topology: three-phase diode bridge
- Application: Inverter
- Collector current: 20A
- Module type: IGBT
- Electrical mounting: Press-Fit
- Gate - emitter voltage: ±20V
- Off state voltage max.: 600V
- Semiconductor structure: diode/transistor
- Pulsed collector current: 40A
- Mounting: screw
- Case: MiniSKiiP® 1