Модуль: IGBT; одиночный транзистор; Urmax: 1,2кВ; Ic: 600А; 62MM Технические параметры
- Case: 62mm
- Collector current: 600A
- Electrical mounting: screw
- Features of semiconductor devices: integrated anti-parallel diode
- Gate - emitter voltage: ±20V
- Manufacturer: Mitsubishi
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 1.2kA
- Semiconductor structure: single transistor