Технические параметры
- Topology: three-phase diode bridge
- Collector current: 175A
- Module type: IGBT
- Electrical mounting: Press-in PCB
- Mechanical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.2kV
- Semiconductor structure: diode/transistor
- Pulsed collector current: 400A
- Case: E2-Pack