Технические параметры
- Topology: IGBT half-bridge
- Collector current: 150A
- Module type: IGBT
- Electrical mounting: screw
- Mechanical mounting: screw
- Gate - emitter voltage: ±20V
- Off state voltage max.: 600V
- Semiconductor structure: transistor/transistor
- Pulsed collector current: 300A
- Case: package S