Модуль: IGBT; транзистор/транзистор; полумост IGBT; Urmax: 1,2кВ Технические параметры
- Application: photovoltaics
- Case: SEMiX® 3s
- Collector current: 300A
- Electrical mounting: screw
- Gate - emitter voltage: ±20V
- Manufacturer: SEMIKRON
- Mechanical mounting: screw
- Module type: IGBT
- Off state voltage max.: 1.2kV
- Pulsed collector current: 900A
- Semiconductor structure: transistor/transistor
- Topology: NTC thermistor