Технические параметры
- Case: SP6C
- Drain current: 49A
- Drain-source voltage: 1kV
- Electrical mounting: screw
- Gate-source voltage: ±30V
- Manufacturer: MICROSEMI
- Mechanical mounting: screw
- Module type: MOSFET transistor
- On-State Resistance: 156mΩ
- Power dissipation: 1.25kW
- Pulsed drain current: 240A
- Semiconductor structure: SiC diode/transistor
- Technology: SiC
- Topology: MOSFET half-bridge + serial diodes + parrallel diodes