Транзистор: N-MOSFET; 40В; 600А; 1250Вт; TO264; 100нс Технические параметры
- Case: TO264
- Channel kind: enhanced
- Drain current: 600A
- Drain-source voltage: 40V
- Features of semiconductor devices: thrench gate power mosfet
- Gate charge: 590нКл
- Kind of package: tube
- Manufacturer: IXYS
- Mounting: THT
- On-State Resistance: 0.0015Ω
- Power dissipation: 1250W
- Reverse recovery time: 100ns
- Type of transistor: N-MOSFET