Модули MOSFET

Выбор по параметрам:

Operating Temperature Min.

-40°C
-55°C

Fall Time

10ns
135ns
15ns
17ns
20ns
26ns
28ns
29ns

30ns
40ns
50ns
7.6ns
82ns

Rise Time

100ns
10ns
120ns
13ns
150ns
15ns
180ns
19ns

23ns
25ns
4.4ns
40ns
43ns
80ns
9ns

Ток стока

100A
150A

Width

3.99mm
3.9mm
4mm
7.1mm
7.6mm

Reflow Temperature Max.

260°C
300°C

Pulsed drain current

-5A
160A
18A
20A
320A
44A
48A
60A

9.6A

Continuous Drain Current (Id)

-15.5A
20A
270mA
340mA
6.5A
8A
915mA

Drain-Source Voltage (Vds)

-60V
1kV
20V
30V
600V
60V
900V

Gate-Source Voltage

Accuracy

0.5%

Operating Temperature Max.

125°C
150°C
175°C

Collector current

Length

10.5mm
10.9mm
4.99mm
4.9mm
5mm
8.74mm

Supply Voltage Max.

15.4V
18V
20V

Supply Voltage Min.

10V
11.1V
12V
4.5V
6V
9.5V

#Promotion

vishay_201906

Polarisation

unipolar

Polarity

полевой

Mounting

Turn-OFF Delay Time

25ns
50ns
55.8ns
55ns
59ns
85ns
94ns

Manufacturer

Advanced Linear Devices (ALD)
Allen-Bradley
Anpec
AOS
APEC
CET
CREE
DC COMPONENTS

Fairchild Semiconductor
FRS
FUJI
Fujitsu
Hitachi
Infineon
INTERNATIONAL RECTIFIER
Intersil
IXYS
MCC
MCS Electronics
Microchip
Mitsubishi
Motorola
NEC
NEXPERIA
NXP
ON SEMICONDUCTOR
Powerex
RENESAS
Rohm
Sanyo
SEMIKRON
SHINDENGEN
SK
STM
Texas Instruments
Toshiba
UTC
Vishay
Vishay Siliconix
Wolfspeed (Cree)

Gate charge

0.6нКл
0.7нКл
0.9нКл
1.82нКл
10.1нКл
118нКл
124нКл
125нКл

13.6нКл
150нКл
16нКл
18нКл
2.1нКл
2.3нКл
2.7нКл
203нКл
220нКл
3.1нКл
3.5нКл
362нКл
37нКл
58нКл
6.2нКл
7.4нКл
7.7нКл
80нКл

Operating voltage

Turn-off time

760ns

Pulsed collector current

Frequency

130kHz

Мощность

0.4W
2.1W
214W
375W

Turn-on time

85ns

Сопротивление в открытом состоянии

2.3mΩ
6.4mΩ

Technology

CoolMOS™
MDmesh™
NexFET™
STripFET™ F7
Strong IRFET™
SuperMesh™

Collector-emitter voltage

1.2kV

Supply Current

Turn-ON Delay Time

12.2ns
13ns
17ns
20ns
22ns
25ns
28ns
3.7ns

ON Resistance (Rds(on))

1.1Ω
1.5Ω
1.6Ω
135mΩ
150mΩ
2.5Ω
950mΩ

Power Dissipation (Pd)

140W
160W
280mW
300mW
65W

Bandwidth

15kHz

Height

1.25mm
1.75mm
2.65mm
5.33mm

Output current

1.3A

Operating current

1.3A

Gate - emitter voltage

±20V

Power dissipation

0.13W
0.25W
0.272W
0.33W
0.3W
0.46W
0.48W
0.4W

0.7W
0.96W
1.06W
1.1W
1.25W
1.56W
1.5W
1.6W
1.8/0.73W
1.8W
110W
125W
140W
147W
150W
156W
160W
190W
1W
2.5W
208W
20W
250W
25W
278W
290mW
300W
30W
310W
312W
313W
34.5W
357W
35W
3W
400W
40W
446W
450W
45W
460W
520W
55W
62.5W
625W
70W
75W
80W
83W
90W
96W

Package

TO220-3

Operating temperature

-40...150°C

On-State Resistance

0.039Ω
0.057Ω
0.064Ω
0.075Ω
0.099Ω
0.108Ω
0.13/0.32Ω
0.13Ω

0.192Ω
0.279Ω
0.285Ω
0.38Ω
0.45Ω
0.9Ω
1.19Ω
1.3Ω
1.4Ω
1.5Ω
10.5mΩ
10.5Ω
100mΩ
10mΩ
119mΩ
1200mΩ
1250mΩ
125mΩ
12mΩ
1300mΩ
1350mΩ
135mΩ
138mΩ
1500mΩ
150mΩ
15mΩ
16000mΩ
160mΩ
16mΩ
17mΩ
1800mΩ
180mΩ
1850mΩ
18mΩ
190mΩ
192mΩ
1Ω
2.3mΩ
2.5Ω
220mΩ
22mΩ
230mΩ
23mΩ
250mΩ
279mΩ
295mΩ
299mΩ
29mΩ
320mΩ
3300mΩ
33mΩ
34mΩ
3500mΩ
3600mΩ
360mΩ
36mΩ
3700mΩ
380mΩ
4.6mΩ
4000mΩ
400mΩ
430mΩ
45mΩ
4800mΩ
4mΩ
500mΩ
52mΩ
550mΩ
55mΩ
6.4mΩ
600mΩ
60mΩ
65/100mΩ
6500mΩ
65mΩ
7.5mΩ
70mΩ
750mΩ
79mΩ
8.5mΩ
850mΩ
85mΩ
8mΩ
9000mΩ
900mΩ
950mΩ

Number of channels

Kind of package

tape
tube
туба

Kind of output

P-Channel

Kind of integrated circuit

high-side
LED driver

Mount

Radiator thickness

1.14...1.4мм

Gate-source voltage

±12V
±15V
±20V
±20В
±25V
±30V
±6V
±8V

Features of semiconductor devices

ESD protected gate

Drain current

-0.43A
-0.8A
-1.3A
-1.5A
-10A
-14A
-1A
-2.2A

-2.4A
-3.5A
-3A
-4.8A
-6.4A
0.18A
0.22A
0.295A
0.2A
0.34A
0.66A
0.6A
0.915A
1.3A
1.45A
1.51A
1.6A
1.89A
1.8A
1.9A
10.71A
100A
10A
11.6A
11A
12.6A
120A
13.1A
150A
15A
160mA
16A
2.1A
2.2A
2.8/-2.4A
2.8A
20.8A
21.9A
21A
23A
24A
25A
3.1A
3.3A
3.8A
3.9A
30A
37.8A
38A
3A
4.3A
4.4A
4.5A
4.6A
41.5A
42A
43A
46A
5.4A
5.7A
50.5A
56A
58A
5A
6.93A
60A
61A
68A
6A
7.3A
7.6A
7.8A
77A
78A
8.2A
8.5A
80A
8A
9.45A
9.4A

Drain-source voltage

-150V
-20V
-30V
-40V
-60V
-8V
1000V
100V

120V
1500V
1700V
20/-20V
200V
20V
250V
30V
400V
40V
450V
500V
550V
55V
600V
60V
620V
650V
75V
800V
900V
950V

Control voltage

1.5...8V DC

Contacts

Channel kind

enhanced

Case

ChipFET
D2PAK
DPAK
I2PAK
IPAK
MAX247
MICROFOOT® 1.6x1.6
PG-TO220-3

PG-TO220-3-FP
PG-TO247-3
PG-TO252-3
POWERMITE
SC70
SC75
SC88
SC89
SO8
SOT223
SOT23
SOT23-3
SOT23-6
SOT323
SOT363
SUPER247
TO220-3
TO220FP
TO247
TO247-3
TO247AC
TO3PF
WDFN6
WDFN8

Housing

TO220-3

MSL

Level-1
Level-2
Level-3

Output Current

1.5A
1.6 A 3.3 A
1.9 A 2.3 A
180 mA 260 mA
2.3 A 3.3 A
2.5A
200 mA 350 mA
210 mA 360 mA

250 mA 500 mA
3A

Ports

Phases

Single

Packaging

Tape & Reel
Tube

ADC Channels

Outputs

Height Units

Type

High Side
High Side Low Side
Low Side

Configuration

Half Bridge
Non-Inverting

Mounting Type

SMD
Through Hole

Package Type

DIP
SC-75
SOIC
SOT-323
TO-220AB
TO-247
TO-252

Transistor Polarity

N-Channel
P-Channel

Meter Type

Digital

Type of transistor

IGBT
N-MOSFET
N-MOSFET x2
N/P-MOSFET
P-MOSFET

Type of integrated circuit

driver
power switch

Transistor type

N-MOSFET

Transistor kind

complementary

Supply voltage

1.8...8V DC

Главная Каталог Активные компоненты Дискретные полупроводники, лампы Транзисторные модулиМодули MOSFET

641 - 647 из 647 Начало 29 30 31 32 33 Конец

Цены указаны без НДС

производитель:: STM

Склад:: *

Цены указаны без НДС

производитель:: STM

Склад:: *

Цены указаны без НДС

производитель:: Vishay

Склад:: *

Цены указаны без НДС

производитель:: Vishay

Склад:: *

Цены указаны без НДС

производитель:: ON SEMICONDUCTOR

Склад:: *

Цены указаны без НДС

производитель:: IXYS

Склад:: *

Цены указаны без НДС

производитель:: IXYS

Склад:: *

641 - 647 из 647 Начало 29 30 31 32 33 Конец