Транзистор: N/P-MOSFET; полевой; комплементарная пара; 20/-20В Технические параметры
- Case: WDFN6
- Channel kind: enhanced
- Drain current: 2.8/-2.4A
- Drain-source voltage: 20/-20V
- Gate-source voltage: ±8V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: SMD
- On-State Resistance: 65/100mΩ
- Polarisation: unipolar
- Power dissipation: 1.5W
- Transistor kind: complementary
- Type of transistor: N/P-MOSFET