Технические параметры
- Drain current: 2.1A
- #Promotion: vishay_201906
- Gate charge: 3.5nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±8V
- Drain-source voltage: 20V
- Mounting: SMD
- Case: SOT23
- Type of transistor: N-MOSFET
- On-State Resistance: 0.057Ω
- Power dissipation: 0.46W