Технические параметры
- Drain current: -0.43A
- #Promotion: vishay_201906
- Gate charge: 7.7nC
- Channel kind: enhanced
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: -150V
- Mounting: SMD
- Case: SOT23
- Type of transistor: P-MOSFET
- On-State Resistance: 1.3Ω
- Power dissipation: 0.48W