Технические параметры
- Drain current: 7.8A
- #Promotion: vishay_201906
- Gate charge: 58nC
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±30V
- Drain-source voltage: 600V
- Mounting: SMD
- Case: D2PAK
- Type of transistor: N-MOSFET
- On-State Resistance: 0.38Ω
- Power dissipation: 147W