Технические параметры
- Technology: SuperMesh™
- Drain current: 80A
- Channel kind: enhanced
- Polarisation: unipolar
- Gate-source voltage: ±20V
- Drain-source voltage: 40V
- Pulsed drain current: 320A
- Mounting: SMD
- Case: D2PAK
- Type of transistor: N-MOSFET
- On-State Resistance: 4mΩ
- Power dissipation: 110W