Транзистор: N-MOSFET Технические параметры
- Case: D2PAK
- Channel kind: enhanced
- Drain current: 80A
- Drain-source voltage: 40V
- Gate-source voltage: ±20V
- Manufacturer: STM
- Mounting: SMD
- On-State Resistance: 4mΩ
- Polarisation: unipolar
- Power dissipation: 110W
- Pulsed drain current: 320A
- Technology: SuperMesh™
- Type of transistor: N-MOSFET