Транзистор: N-MOSFET; полевой; 100В; 28А; 115Вт; D2PAK Технические параметры
- Manufacturer: STM
- Technology: SuperMesh™
- Drain current: 28A
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±20V
- Drain-source voltage: 100V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: D2PAK
- Type of transistor: N-MOSFET
- On-State Resistance: 35mΩ
- Power dissipation: 115W