Транзистор: N-MOSFET; полевой; 500В; 1,9А; 45Вт; DPAK Технические параметры
- Manufacturer: STM
- Technology: SuperMesh™
- Drain current: 1.9A
- Polarisation: unipolar
- Kind of package: tape
- Gate-source voltage: ±30V
- Drain-source voltage: 500V
- Features of semiconductor devices: ESD protected gate
- Mounting: SMD
- Case: DPAK
- Type of transistor: N-MOSFET
- On-State Resistance: 2700mΩ
- Power dissipation: 45W