Транзистор: N-MOSFET; полевой; 1700В; 3А; 55Вт; TO3PF Технические параметры
- Case: TO3PF
- Channel kind: enhanced
- Drain current: 3A
- Drain-source voltage: 1700V
- Gate-source voltage: ±30V
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- On-State Resistance: 10.5Ω
- Polarisation: unipolar
- Power dissipation: 55W
- Type of transistor: N-MOSFET