Транзистор: N-MOSFET; CoolMOSTM; полевой; 800В; 3,8А; Idm: 18А; 83Вт Технические параметры
- Case: PG-TO252-3
- Channel kind: enhanced
- Drain current: 3.8A
- Drain-source voltage: 800V
- Gate-source voltage: ±20V
- Manufacturer: Infineon
- Mounting: SMD
- On-State Resistance: 900mΩ
- Polarisation: unipolar
- Power dissipation: 83W
- Pulsed drain current: 18A
- Technology: CoolMOS™
- Type of transistor: N-MOSFET