Модуль: IGBT; 6,5кВ; 600А; HIPAK Технические параметры
- Application: Inverter
- Case: HIPAK
- Collector current: 600A
- Electrical mounting: screwed
- Gate - emitter voltage: 20V
- Housing: HIPAK
- Manufacturer: ABB
- Max. forward impulse current: 1.2kA
- Module type: IGBT
- Mounting: screwed
- Off state voltage max.: 6.5kV
- Operating temperature: -50...125°C
- Semiconductor structure: transistor/transistor
- Topology: IGBT half-bridge x3
- Transistor type: IGBT
- Мощность: 11.19kW
- Напряжение коллектор-эмиттер: 6.5kV
