Infineon BCM856SH6327XTSA1 Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-363 Технические параметры
- Automotive Qualification Standard: AEC-Q101
- Base Emitter Saturation Voltage Max. (Vbe(sat)): 850mV
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 250mV
- Collector-Base Voltage (Vcbo): 80V
- Collector-Emitter Voltage (Vceo): 65V
- Continuous Collector Current (Ic): 100mA
- DC Current Gain (hFE): 290
- Emitter-Base Voltage (Vebo): 5V
- Height: 0.9mm
- Height Units: 6
- Length: 2mm
- Manufacturer: Infineon
- Mounting Type: SMD
- MSL: Level-1
- Operating Temperature Max.: 150°C
- Optical Sensor Output Type: PNP
- Outputs: 2
- Package Type: SOT-363
- Packaging: Tape & Reel
- Power Dissipation (Pd): 250mW
- Transit Frequency: 250MHz
- Width: 1.25mm
