Технические параметры
- Power: 4kW
- Topology: three-phase diode bridge
- Application: Inverter
- Collector current: 15A
- Module type: IGBT
- Electrical mounting: Press Fit
- Gate - emitter voltage: ±20V
- Off state voltage max.: 1.2kV
- Semiconductor structure: diode/transistor
- Pulsed collector current: 220A
- Mounting: screw
- Case: MiniSKiiP® 1