Модуль: диодный; 500В; на провод; 47А; MOSFET Технические параметры
- Drain current: 33A
- Electrical mounting: soldered
- Gate-source voltage: 20V
- Manufacturer: IXYS
- Max. forward impulse current: 130A
- Module type: transistor
- Mount: THT
- Mounting: screwed
- Nominal current: 47A
- Off state voltage max.: 500V
- Operating temperature: -40...150°C
- Semiconductor structure: diode/transistor
- Technology: MOSFET
- Topology: bridge rectifier
- Type of semiconductor component: диодный мост
- Мощность: 310W
