Микросхема: reversed battery and overvoltage protection; D2PAK Технические параметры
- Breakdown voltage: 35V
- Case: D2PAK
- Diode type: защитный, сборка
- Features of semiconductor devices: RBO
- Housing: D2PAK
- Integrated circuit type: reversed battery and overvoltage protection
- Kind of integrated circuit: security module
- Kind of package: лента
- Leakage current: 100µA
- Load current: 40A
- Manufacturer: STM
- Max. forward impulse current: 120A
- Mount: SMD
- Mounting: SMD
- Off state voltage max.: 80V
- Мощность: 1.5kW
- Потери мощности: 1.5kW