Диод: защитный; Характеристики: защита ESD Технические параметры
- Breakdown voltage: 6.1V
- Case: SOT-665
- Diode type: Transil array
- Leakage current: 100nA
- Manufacturer: STM
- Mounting: SMD
- Number of channels: 4
- Off state voltage max.: 3V
- Power dissipation: 30W
- Semiconductor structure: unidirectional