THT IGBT transistors Технические параметры
- Collector Emitter Saturation Voltage Max. (Vce(sat)): 1.5V
- Collector-Emitter Voltage (Vceo): 600V
- Continuous Collector Current (Ic): 75A
- Emitter Leakage Current: 100nA
- Gate Emitter Voltage (Vge): 20V
- Height Units: 3
- Manufacturer: Infineon
- Mounting Type: Through Hole
- Operating Temperature Max.: 175°C
- Operating Temperature Min.: -40°C
- Package Type: TO-247
- Packaging: Tube
- Phases: Single
- Power Dissipation (Pd): 428W
- Reflow Temperature Max.: 260°C
