IR phototransistor 860 nm 20 V SMD Технические параметры
- Accessory Colour: Black
- Collector Current Max.: 50mA
- Collector Dark Current Max.: 100nA
- Collector-Emitter Saturation Voltage Max.: 400mV
- Collector-Emitter Voltage (VCEO) Max.: 20V
- Emitter−Collector Voltage (VECO) Max.: 7V
- Fall Time Max.: 95µs
- Manufacturer: Vishay Semiconductors
- Mounting Type: SMD
- Output Current 2: -888
- Ripple & Noise (%): -999
- Rise Time Max.: 70µs
- Wavelength of Peak Sensitivity: 860