Технические параметры
- Collector Current Max.: 50mA
- Collector-Emitter Saturation Voltage Max.: 200mV
- Collector-Emitter Voltage (VCEO) Max.: 70V
- Current Transfer Ratio (CTR) Max.: 260%
- Current Transfer Ratio (CTR) Min.: 130%
- Emitter−Collector Voltage (VECO) Max.: 6V
- Forward Current (If) Max.: 50mA
- Forward Voltage (Vf) Max.: 1.4V
- Isolation Voltage: 5kV
- Manufacturer: ON SEMICONDUCTOR
- Operating Temperature Max.: 110°C
- Operating Temperature Min.: -55°C
- Outputs: 1
- Package Type: DIP-4
- Power Dissipation (Pd): 150mW
- Reverse Voltage (Vr): 6V
- Sensor Output: Phototransistor