Технические параметры
- Case: DIP4
- Collector Current Max.: 50mA
- Collector-Emitter Saturation Voltage Max.: 200mV
- Collector-emitter voltage: 70V
- Collector-Emitter Voltage (VCEO) Max.: 70V
- CTR@If: 50-600%@5mA
- Current Transfer Ratio (CTR) Max.: 600%
- Current Transfer Ratio (CTR) Min.: 50%
- Emitter−Collector Voltage (VECO) Max.: 6V
- Forward Current (If) Max.: 50mA
- Forward Voltage (Vf) Max.: 1.2V
- Insulation voltage: 5kV
- Isolation Voltage: 5kV
- Kind of output: transistor
- Manufacturer: ON SEMICONDUCTOR
- Mounting: THT
- Number of channels: 1
- Operating Temperature Max.: 110°C
- Operating Temperature Min.: -55°C
- Outputs: 1
- Package Type: DIP-4
- Power Dissipation (Pd): 150mW
- Reverse Voltage (Vr): 6V
- Sensor Output: Phototransistor
- Turn-off time: 3µs
- Turn-on time: 4µs
- Type of semiconductor component: optocoupler