Микросхема памяти; NV SRAM; 32Кx8бит; 4,75?5,5В; 70нс; DIP28 Технические параметры
- Access time: 70ns
- Battery Backup Switching Max.: 3V
- Case: DIP28
- Date Format: Binary
- Height: 8.89mm
- Housing: DIP28
- Integrated circuit type: микросхема памяти
- Interfaces: Parallel
- Kind of memory: NV SRAM
- Length: 39.88mm
- Manufacturer: STM
- Memory capacity: 256кбит
- Memory organisation: 32Кx8бит
- Memory Size: 32КБайт
- Mount: THT
- Mounting: THT
- Mounting Type: Through Hole
- Operating Temperature Max.: 70°C
- Operating Temperature Min.: 0°C
- Operating voltage: 4.75...5.5В
- Package Type: PDIP
- Packaging: Tube
- Pins: 28
- Reflow Temperature Max.: 260°C
- Supply Voltage Max.: 5.5V
- Supply Voltage Min.: 4.75V
- Time Format: HH:MM:SS (24 hr)
- Width: 18.34mm